Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors

Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

High performance single-walled carbon nanotube field effect transistors SWCNT-FETs fabricated with thin atomic layer deposited ALD Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10−11 A at −2.5 V Vg +7 V, a subthreshold swing of S 105 mV/decade, and a maximum on current of −12 A...

Schottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3

The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height SBH at the metal/semiconductor interface. ...

High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator

The use of aluminum oxide as the gate insulator for low temperature (<600C) polycrystalline SiGe thin film transistors (TFTs) has been studied. The aluminum oxide was sputtered from a pure aluminum target using a reactive N20 plasma. The composition of the deposited aluminum oxide was found to be almost stoichiomertic (i.e. Al2O3), with a very small fraction of nitrogen incorporation. Even with...

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

High-Performance Polycrystalline SiGe Thin-Film Transistors Using Al O Gate Insulators

The use of aluminum oxide as the gate insulator for low temperature (600 C) polycrystalline SiGe thin-film transistors (TFT’s) has been studied. The aluminum oxide was sputtered from a pure aluminum target using a reactive N2O plasma. The composition of the deposited aluminum oxide was found to be almost stoichiometric (i.e., Al2O3), with a very small fraction of nitrogen incorporation. Even wi...